FDMS7602S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1W

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Length :

5mm

Weight :

211mg

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.8V

Series :

PowerTrench®

Number of Pins :

8

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Height :

700μm

Factory Lead Time :

16 Weeks

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 12A, 10V

REACH SVHC :

No SVHC

Resistance :

7.5mOhm

Pulsed Drain Current-Max (IDM) :

40A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Contact Plating :

Gold

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 15V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-N6

Max Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN SOURCE

Fall Time (Typ) :

3.2 ns

FET Feature :

Logic Level Gate

Width :

6mm

Current - Continuous Drain (Id) @ 25°C :

12A 17A

Package / Case :

8-PowerWDFN

Lead Free :

Lead Free

Nominal Vgs :

1.8 V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Rise Time :

3.8ns

Turn-Off Delay Time :

27 ns

Number of Terminations :

6

Continuous Drain Current (ID) :

17A