FDMS7600AS
- Mfr.Part #
- FDMS7600AS
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 12A/22A POWER56
- Stock
- 1,395
- In Stock :
- 1,395
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- Height :
- 700μm
- Radiation Hardening :
- No
- Nominal Vgs :
- 1 V
- Continuous Drain Current (ID) :
- 40A
- Package / Case :
- 8-PowerWDFN
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 12A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 15V
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 5.2 ns
- Case Connection :
- SOURCE
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- Logic Level Gate
- JESD-609 Code :
- e4
- Weight :
- 211mg
- Max Power Dissipation :
- 1W
- Number of Elements :
- 2
- Threshold Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Width :
- 6mm
- JESD-30 Code :
- R-PDSO-F6
- Rise Time :
- 7.6ns
- Number of Terminations :
- 6
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Type :
- 2 N-Channel (Dual)
- Power Dissipation :
- 1W
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12A 22A
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Lead Free :
- Lead Free
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 45 ns
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDMS7600AS
FDMS7600AS Documents

FDMS7600AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS7600AS Description
The device includes two specialized N-channel MOSFET in a dual MLP package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDMS7600AS Features
Q1: N-Channel
Max. RDS(on) = 7.5 m|? at VGS = 10 V, ID = 12 A
Max. RDS(on) = 12 m|? at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
Max. RDS(on) = 2.8 m|? at VGS = 10 V, ID = 20 A
Max. RDS(on) = 3.3 m|? at VGS = 4.5 V, ID = 18 A
RoHS Compliant
FDMS7600AS Applications
This product is general usage and suitable for many different applications.
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