FDMS3669S-SN00345

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package Shape :

RECTANGULAR

Manufacturer :

ON Semiconductor

Feedback Cap-Max (Crss) :

55 pF

Rds On (Max) @ Id, Vgs :

10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V

Current - Continuous Drain (Id) @ 25°C :

13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)

FET Feature :

Standard

Terminal Position :

Dual

Mounting Type :

Surface Mount

JEDEC-95 Code :

MO-240AA

Product Status :

Obsolete

Supplier Device Package :

Power56

Surface Mount :

yes

Power Dissipation-Max (Abs) :

2.5 W

Polarity/Channel Type :

N-Channel

Series :

PowerTrench®

Number of Elements :

2

Power - Max :

1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)

DS Breakdown Voltage-Min :

30 V

Transistor Element Material :

SILICON

Number of Terminals :

6

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C ~ 150°C (TJ)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.7V @ 250µA, 2.5V @ 1mA

Brand Name :

ON Semiconductor

Drain-source On Resistance-Max :

0.01 Ω

Terminal Form :

Flat

Case Connection :

DRAIN SOURCE

JESD-30 Code :

R-PDSO-F6

FET Type :

2 N-Channel (Dual) Asymmetrical

Reach Compliance Code :

Compliant

Package / Case :

8-PowerTDFN

Package :

Tape and Reel (TR)

Power Dissipation Ambient-Max :

2.5 W

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1605pF @ 15V, 2060pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V, 34nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR