FDMS3669S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Weight :

171mg

Number of Pins :

8

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

13A

Width :

5.9mm

Rise Time :

3ns

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Flat

Feedback Cap-Max (Crss) :

55 pF

Rds On (Max) @ Id, Vgs :

10m Ω @ 13A, 10V

Transistor Application :

SWITCHING

Published :

2009

FET Type :

2 N-Channel (Dual) Asymmetrical

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Max Power Dissipation :

2.5W

JESD-609 Code :

e3

Turn-Off Delay Time :

24 ns

Power - Max :

1W

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1605pF @ 15V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Number of Terminations :

6

Height :

1.1mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Fall Time (Typ) :

3 ns

JESD-30 Code :

R-PDSO-F6

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.01Ohm

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Length :

5mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Case Connection :

DRAIN SOURCE

Continuous Drain Current (ID) :

60A

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

13A 18A