FDMS3664S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.7 ns

Height :

1.1mm

Max Power Dissipation :

1W

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Feedback Cap-Max (Crss) :

70 pF

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

2

Terminal Form :

Flat

Pbfree Code :

yes

Weight :

171mg

FET Type :

2 N-Channel (Dual) Asymmetrical

Drain to Source Breakdown Voltage :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

8m Ω @ 13A, 10V

Current - Continuous Drain (Id) @ 25°C :

13A 25A

Length :

5mm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Power Dissipation :

2.5W

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

13A

JESD-30 Code :

R-PDSO-F6

FET Feature :

Logic Level Gate

Width :

5.9mm

Number of Terminations :

6

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN SOURCE

Mounting Type :

Surface Mount

Series :

PowerTrench®

Factory Lead Time :

13 Weeks

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

25A

Input Capacitance (Ciss) (Max) @ Vds :

1765pF @ 15V

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)