FDMS3620S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

17.5A 38A

Continuous Drain Current (ID) :

38A

JESD-30 Code :

R-PDSO-N6

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 17.5A, 10V

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

17.5A

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual) Asymmetrical

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

6.1mm

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0047Ohm

Drain to Source Breakdown Voltage :

25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Max Power Dissipation :

1W

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 13V

Transistor Element Material :

SILICON

Length :

5.1mm

ECCN Code :

EAR99

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Weight :

90mg

Turn-Off Delay Time :

41 ns

Case Connection :

DRAIN SOURCE

Height :

1.05mm

Mounting Type :

Surface Mount

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Base Part Number :

FDMS3620S

Factory Lead Time :

18 Weeks

Mount :

Surface Mount