FDMS3606S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Number of Elements :

2

FET Type :

2 N-Channel (Dual) Asymmetrical

Weight :

171mg

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1785pF @ 15V

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Max Power Dissipation :

1W

Fall Time (Typ) :

3.4 ns

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

27A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Length :

6mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

13A

Mount :

Surface Mount

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

13A 27A

Rds On (Max) @ Id, Vgs :

8m Ω @ 13A, 10V

Reach Compliance Code :

not_compliant

Height :

1mm

Number of Channels :

2

Rise Time :

5.5ns

Turn-Off Delay Time :

36 ns

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN SOURCE

JESD-30 Code :

R-PDSO-F6

Series :

PowerTrench®

Mounting Type :

Surface Mount

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN