FDMS3604S

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Mfr.Part #
FDMS3604S
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET 2N-CH 30V 13A/23A POWER56
Stock
31,893
In Stock :
31,893

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
Weight :
171mg
JESD-30 Code :
R-PDSO-N6
Turn On Delay Time :
13 ns
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Width :
5mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Gate to Source Voltage (Vgs) :
20V
Rise Time :
4.8ns
Continuous Drain Current (ID) :
23A
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN SOURCE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.7V @ 250μA
Number of Pins :
8
FET Feature :
Logic Level Gate
Number of Terminations :
6
Drain to Source Breakdown Voltage :
30V
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
8m Ω @ 13A, 10V
Pbfree Code :
yes
Reach Compliance Code :
not_compliant
Height :
1mm
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
NO LEAD
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
13A
Mount :
Surface Mount
Length :
6mm
Fall Time (Typ) :
3.4 ns
Pulsed Drain Current-Max (IDM) :
40A
Number of Elements :
2
Factory Lead Time :
13 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
1785pF @ 15V
Max Power Dissipation :
1W
Avalanche Energy Rating (Eas) :
40 mJ
Transistor Application :
SWITCHING
Package / Case :
8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C :
13A 23A
Series :
PowerTrench®
JESD-609 Code :
e3
FET Type :
2 N-Channel (Dual) Asymmetrical
Turn-Off Delay Time :
31 ns
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Datasheets
FDMS3604S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDMS3604S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, FDMS3604S pinout, FDMS3604S datasheet PDF, FDMS3604S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDMS3604S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS3604S


FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMS3604S Description


FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDMS3604S Features


  • Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

  • Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

  • Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A

  • Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A

  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses

  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

  • This Device is Pb?Free and is RoHS Compliant



FDMS3604S Applications


  • Computing

  • Communications

  • General Purpose Point of Load

  • Notebook VCORE


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