FDMS3604S
- Mfr.Part #
- FDMS3604S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 13A/23A POWER56
- Stock
- 31,893
- In Stock :
- 31,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 40A
- Weight :
- 171mg
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 13A 23A
- Terminal Form :
- NO LEAD
- Max Power Dissipation :
- 1W
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Continuous Drain Current (ID) :
- 23A
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 3.4 ns
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Height :
- 1mm
- Turn On Delay Time :
- 13 ns
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 13A, 10V
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Drain Current-Max (Abs) (ID) :
- 13A
- Series :
- PowerTrench®
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Rise Time :
- 4.8ns
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1785pF @ 15V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- 8-PowerTDFN
- Drain to Source Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-N6
- Terminal Finish :
- Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Length :
- 6mm
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.7V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5mm
- Number of Elements :
- 2
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN SOURCE
- FET Feature :
- Logic Level Gate
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 31 ns
- Datasheets
- FDMS3604S
FDMS3604S Documents

FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3604S Description
FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3604S Features
-
Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
-
Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A
-
Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A
-
Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A
-
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
-
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
-
This Device is Pb?Free and is RoHS Compliant
FDMS3604S Applications
-
Computing
-
Communications
-
General Purpose Point of Load
-
Notebook VCORE
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