FDMS3604S
- Mfr.Part #
- FDMS3604S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 13A/23A POWER56
- Stock
- 31,893
- In Stock :
- 31,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Weight :
- 171mg
- JESD-30 Code :
- R-PDSO-N6
- Turn On Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Width :
- 5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 4.8ns
- Continuous Drain Current (ID) :
- 23A
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN SOURCE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.7V @ 250μA
- Number of Pins :
- 8
- FET Feature :
- Logic Level Gate
- Number of Terminations :
- 6
- Drain to Source Breakdown Voltage :
- 30V
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 13A, 10V
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Height :
- 1mm
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- NO LEAD
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 13A
- Mount :
- Surface Mount
- Length :
- 6mm
- Fall Time (Typ) :
- 3.4 ns
- Pulsed Drain Current-Max (IDM) :
- 40A
- Number of Elements :
- 2
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1785pF @ 15V
- Max Power Dissipation :
- 1W
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 13A 23A
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Turn-Off Delay Time :
- 31 ns
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDMS3604S

FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3604S Description
FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3604S Features
-
Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
-
Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A
-
Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A
-
Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A
-
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
-
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
-
This Device is Pb?Free and is RoHS Compliant
FDMS3604S Applications
-
Computing
-
Communications
-
General Purpose Point of Load
-
Notebook VCORE
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