FDMS3602S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

6mm

Pbfree Code :

yes

Weight :

90mg

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

15A

Continuous Drain Current (ID) :

26A

Pulsed Drain Current-Max (IDM) :

40A

Package / Case :

8-PowerTDFN

Rise Time :

4.2ns

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

3.2 ns

Current - Continuous Drain (Id) @ 25°C :

15A 26A

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Radiation Hardening :

No

Height :

1.05mm

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 13V

Number of Pins :

8

Lead Free :

Lead Free

Turn-Off Delay Time :

31 ns

Resistance :

5.6MOhm

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 15A, 10V

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

13 Weeks

Published :

2006

Nominal Vgs :

1.8 V

Case Connection :

DRAIN SOURCE

Avalanche Energy Rating (Eas) :

50 mJ

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

25V

Terminal Finish :

Tin (Sn)

Length :

5mm

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Series :

PowerTrench®

JESD-30 Code :

R-PDSO-N6

Max Power Dissipation :

1W

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V