FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 15,847
- In Stock :
- 15,847
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On Max :
- 5.6 mΩ
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 25V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Width :
- 6mm
- Terminal Position :
- QUAD
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Height :
- 1.05mm
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Feedback Cap-Max (Crss) :
- 90 pF
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Dual
- Number of Elements :
- 2
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 13 Weeks
- Turn-Off Delay Time :
- 38 ns
- Case Connection :
- DRAIN SOURCE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 15A
- Fall Time (Typ) :
- 3.9 ns
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 1W
- Continuous Drain Current (ID) :
- 30A
- Weight :
- 171mg
- Drain to Source Resistance :
- 1.6mOhm
- Nominal Vgs :
- 1.8 V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 7
- Length :
- 5mm
- Input Capacitance :
- 1.68nF
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2.5W
- JESD-30 Code :
- R-PQFP-N7
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 25V
- Rise Time :
- 5.3ns
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMS3600S

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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