FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 15,847
- In Stock :
- 15,847
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 25V
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 7
- ECCN Code :
- EAR99
- Weight :
- 171mg
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 1.8 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 8
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 1.6mOhm
- Height :
- 1.05mm
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 2.5W
- Turn-Off Delay Time :
- 38 ns
- Terminal Position :
- QUAD
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-30 Code :
- R-PQFP-N7
- Rds On Max :
- 5.6 mΩ
- Fall Time (Typ) :
- 3.9 ns
- Max Power Dissipation :
- 1W
- Rise Time :
- 5.3ns
- Continuous Drain Current (ID) :
- 30A
- Element Configuration :
- Dual
- Drain Current-Max (Abs) (ID) :
- 15A
- Input Capacitance :
- 1.68nF
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Feedback Cap-Max (Crss) :
- 90 pF
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 6mm
- Length :
- 5mm
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN SOURCE
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 25V
- Datasheets
- FDMS3600S
FDMS3600S Documents

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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