FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 15A/30A 8PQFN
- Stock
- 13,303
- In Stock :
- 13,303
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- Length :
- 5mm
- Input Capacitance :
- 1.68nF
- Drain to Source Breakdown Voltage :
- 25V
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Rds On Max :
- 5.6 mΩ
- JESD-30 Code :
- R-PQFP-N7
- Number of Terminations :
- 7
- Mount :
- Surface Mount
- Number of Elements :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn-Off Delay Time :
- 38 ns
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 1.8 V
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 3.9 ns
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 13 Weeks
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 171mg
- Drain to Source Resistance :
- 1.6mOhm
- Pbfree Code :
- yes
- Feedback Cap-Max (Crss) :
- 90 pF
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.5W
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Width :
- 6mm
- Continuous Drain Current (ID) :
- 30A
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- QUAD
- Rise Time :
- 5.3ns
- Drain Current-Max (Abs) (ID) :
- 15A
- Drain to Source Voltage (Vdss) :
- 25V
- Case Connection :
- DRAIN SOURCE
- Height :
- 1.05mm
- Element Configuration :
- Dual
- Datasheets
- FDMS3600S

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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