FDMS3600S
- Mfr.Part #
- FDMS3600S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 15A/30A 8PQFN
- Stock
- 13,303
- In Stock :
- 13,303
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Input Capacitance :
- 1.68nF
- Turn-Off Delay Time :
- 38 ns
- Number of Pins :
- 8
- Length :
- 5mm
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 13 Weeks
- Continuous Drain Current (ID) :
- 30A
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Rise Time :
- 5.3ns
- Feedback Cap-Max (Crss) :
- 90 pF
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 2.5W
- Height :
- 1.05mm
- Drain Current-Max (Abs) (ID) :
- 15A
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 25V
- Number of Terminations :
- 7
- JESD-30 Code :
- R-PQFP-N7
- Drain to Source Resistance :
- 1.6mOhm
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- No SVHC
- Width :
- 6mm
- Rds On Max :
- 5.6 mΩ
- Weight :
- 171mg
- Nominal Vgs :
- 1.8 V
- Terminal Position :
- QUAD
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Voltage (Vdss) :
- 25V
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN SOURCE
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 3.9 ns
- Element Configuration :
- Dual
- Datasheets
- FDMS3600S
FDMS3600S Documents

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
-
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
-
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
-
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
-
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
-
Conforms to RoHS
FDMS3600S Applications
Notebook PC
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