FDMS3600S

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Mfr.Part #
FDMS3600S
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET 2N-CH 25V 15A/30A 8PQFN
Stock
13,303
In Stock :
13,303

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
ECCN Code :
EAR99
Length :
5mm
Input Capacitance :
1.68nF
Drain to Source Breakdown Voltage :
25V
Number of Pins :
8
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Rds On Max :
5.6 mΩ
JESD-30 Code :
R-PQFP-N7
Number of Terminations :
7
Mount :
Surface Mount
Number of Elements :
2
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Turn-Off Delay Time :
38 ns
RoHS Status :
ROHS3 Compliant
Nominal Vgs :
1.8 V
Max Operating Temperature :
150°C
Fall Time (Typ) :
3.9 ns
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
13 Weeks
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Weight :
171mg
Drain to Source Resistance :
1.6mOhm
Pbfree Code :
yes
Feedback Cap-Max (Crss) :
90 pF
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Power Dissipation :
2.5W
Radiation Hardening :
No
Max Power Dissipation :
1W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55°C
Width :
6mm
Continuous Drain Current (ID) :
30A
Packaging :
Tape and Reel (TR)
Terminal Position :
QUAD
Rise Time :
5.3ns
Drain Current-Max (Abs) (ID) :
15A
Drain to Source Voltage (Vdss) :
25V
Case Connection :
DRAIN SOURCE
Height :
1.05mm
Element Configuration :
Dual
Datasheets
FDMS3600S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDMS3600S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:7, FDMS3600S pinout, FDMS3600S datasheet PDF, FDMS3600S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDMS3600S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS3600S


FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMS3600S Description


In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDMS3600S Features


  • Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.

  • At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.

  • Reduced rise/fall periods due to reduced inductance packing reduce switching losses.

  • Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.

  • Conforms to RoHS



FDMS3600S Applications


Notebook PC


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