FDML7610S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 12A, 10V

Element Configuration :

Dual

Drain-source On Resistance-Max :

0.0075Ohm

Pbfree Code :

yes

Power Dissipation :

2.2W

Continuous Drain Current (ID) :

17A

Number of Terminations :

6

JESD-30 Code :

R-PDSO-N6

Turn-Off Delay Time :

31 ns

Drain Current-Max (Abs) (ID) :

60A

Number of Pins :

8

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Height :

750μm

Weight :

300mg

Length :

3mm

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 15V

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-PowerWDFN

Current - Continuous Drain (Id) @ 25°C :

12A 17A

REACH SVHC :

No SVHC

Max Power Dissipation :

2.2W

Nominal Vgs :

1.8 V

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Transistor Element Material :

SILICON

Number of Elements :

2

Width :

4.5mm

Power - Max :

800mW 900mW

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Pulsed Drain Current-Max (IDM) :

40A

Contact Plating :

Gold

Factory Lead Time :

23 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR