FDMJ1023PZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Feedback Cap-Max (Crss) :

70 pF

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Power - Max :

700mW

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Surface Mount :

yes

Package / Case :

6-WFDFN Exposed Pad

JESD-30 Code :

R-PDSO-N6

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

112m Ω @ 2.9A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.9A

Terminal Form :

NO LEAD

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Number of Terminations :

6

Reach Compliance Code :

Unknown

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.112Ohm

Drain Current-Max (Abs) (ID) :

0.0029A

Pin Count :

6