FDI150N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Fall Time (Typ) :

83 ns

Power Dissipation :

110W

Packaging :

Tube

Rise Time :

164ns

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Number of Terminations :

3

Power Dissipation-Max :

110W Tc

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4760pF @ 25V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

2.084g

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

228A

Rds On (Max) @ Id, Vgs :

16m Ω @ 49A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

47 ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

ECCN Code :

EAR99

Turn-Off Delay Time :

86 ns

Continuous Drain Current (ID) :

57A

Published :

2013