FDH210N08

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Mfr.Part #
FDH210N08
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 75V TO247-3
Stock
6,885
In Stock :
6,885

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Weight :
6.39g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
HTS Code :
8541.29.00.95
Package / Case :
TO-247-3
Drain Current-Max (Abs) (ID) :
210A
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Mount :
Through Hole
Factory Lead Time :
4 Weeks
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Element Configuration :
Single
JESD-609 Code :
e3
Drain-source On Resistance-Max :
0.0055Ohm
Reach Compliance Code :
not_compliant
JEDEC-95 Code :
TO-247AB
Drain to Source Breakdown Voltage :
75V
Power Dissipation-Max :
462W Tc
Number of Terminations :
3
Pbfree Code :
yes
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
9375 mJ
Pulsed Drain Current-Max (IDM) :
840A
Packaging :
Tube
Datasheets
FDH210N08
Introducing Transistors - FETs, MOSFETs - Single onsemi FDH210N08 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, FDH210N08 pinout, FDH210N08 datasheet PDF, FDH210N08 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDH210N08 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDH210N08


N-Channel Tube ±20V TO-247-3

FDH210N08 Description

ON Semiconductor's FDH210N08 UniFET MOSFET is a high-voltage MOSFET family based on planar stripe and DMOS technology. This FDH210N08 MOSFET has been designed to lower on-state resistance, improve switching performance, and increase avalanche energy strength.

This FDH210N08 is designed for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.


FDH210N08 Features

  • RDS(ON) = 4.65 m (Typ.), VGS = 10 V, ID = 125 A

  • Low Gate Charge (Typ. 232 nC)

  • Low Crss (Typ. 262 pF)

  • 100% Avalanche Tested

  • Improved dv/dt Capability

  • This Device is Pb?Free and is RoHS Compliant


FDH210N08 Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU

  • Battery Protection Circuit

  • Motor Drives and Uninterruptible Power Supplies


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