FDG1024NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

800mV

Fall Time (Typ) :

1.5 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

360mW

Gate to Source Voltage (Vgs) :

8V

Weight :

28mg

Nominal Vgs :

800 mV

Continuous Drain Current (ID) :

1.2A

Qualification Status :

Not Qualified

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

1.7ns

Rds On (Max) @ Id, Vgs :

175m Ω @ 1.2A, 4.5V

Number of Terminations :

6

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Mount :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

11 ns

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Width :

1.25mm

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 4.5V

Turn On Delay Time :

3.7 ns

Height :

1mm

Contact Plating :

Tin

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Length :

2mm

Drain to Source Breakdown Voltage :

20V

Power - Max :

300mW

Drain-source On Resistance-Max :

0.175Ohm

Max Power Dissipation :

360mW

Operating Temperature :

-55°C~150°C TJ

Published :

2007