FDD9407-F085
- Mfr.Part #
- FDD9407-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A DPAK
- Stock
- 28,047
- In Stock :
- 28,047
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 2
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Power Dissipation-Max :
- 227W Tc
- Drain to Source Breakdown Voltage :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6390pF @ 25V
- Avalanche Energy Rating (Eas) :
- 171 mJ
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 18 ns
- Continuous Drain Current (ID) :
- 100A
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 42 ns
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn On Delay Time :
- 27 ns
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Gate to Source Voltage (Vgs) :
- 10V
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Rise Time :
- 48ns
- Weight :
- 260.37mg
- Number of Elements :
- 1
- Factory Lead Time :
- 29 Weeks
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 80A, 10V
- Datasheets
- FDD9407-F085

N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 6390pF @ 25V 112nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD9407-F085 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 171 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6390pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 27 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.
FDD9407-F085 Features
the avalanche energy rating (Eas) is 171 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 42 ns
FDD9407-F085 Applications
There are a lot of ON Semiconductor
FDD9407-F085 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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