FDD9509L

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Mfr.Part #
FDD9509L
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
FDD9509L
Stock
49,624
In Stock :
49,624

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss) :
40V
DS Breakdown Voltage-Min :
40V
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
Gull wing
Series :
PowerTrench®
Avalanche Energy Rating (Eas) :
82 mJ
Surface Mount :
yes
Drain-source On Resistance-Max :
0.0075Ohm
JEDEC-95 Code :
TO-252AA
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
3V @ 250µA
Number of Elements :
1
Reach Compliance Code :
not_compliant
Reference Standard :
AEC-Q101
Power Dissipation-Max :
150W Tj
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
16 Weeks
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Number of Terminations :
2
Vgs (Max) :
±16V
Mounting Type :
Surface Mount
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
7.5m Ω @ 70A, 10V
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Drain Current-Max (Abs) (ID) :
90A
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3350pF @ 20V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Datasheets
FDD9509L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD9509L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, FDD9509L pinout, FDD9509L datasheet PDF, FDD9509L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD9509L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



P-Channel Tape & Reel (TR) 7.5m Ω @ 70A, 10V ±16V 3350pF @ 20V 75nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD9509L-F085 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 82 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3350pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 90A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDD9509L-F085 Features


the avalanche energy rating (Eas) is 82 mJ
a 40V drain to source voltage (Vdss)


FDD9509L-F085 Applications


There are a lot of ON Semiconductor
FDD9509L-F085 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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