- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 40V
- DS Breakdown Voltage-Min :
- 40V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Avalanche Energy Rating (Eas) :
- 82 mJ
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.0075Ohm
- JEDEC-95 Code :
- TO-252AA
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Reference Standard :
- AEC-Q101
- Power Dissipation-Max :
- 150W Tj
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Vgs (Max) :
- ±16V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 70A, 10V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 90A
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3350pF @ 20V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Datasheets
- FDD9509L
P-Channel Tape & Reel (TR) 7.5m Ω @ 70A, 10V ±16V 3350pF @ 20V 75nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD9509L-F085 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 82 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3350pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 90A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDD9509L-F085 Features
the avalanche energy rating (Eas) is 82 mJ
a 40V drain to source voltage (Vdss)
FDD9509L-F085 Applications
There are a lot of ON Semiconductor
FDD9509L-F085 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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