FDD4N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Weight :

260.37mg

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

Case Connection :

DRAIN

Turn-Off Delay Time :

30.2 ns

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2017

Turn On Delay Time :

12.7 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.7A, 10V

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

114W

Length :

6.73mm

Number of Terminations :

2

Series :

UniFET-II™

Width :

6.22mm

ECCN Code :

EAR99

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Height :

2.39mm

Lead Free :

Lead Free

Mount :

Surface Mount

Fall Time (Typ) :

12.8 ns

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Reach Compliance Code :

not_compliant

Rise Time :

15.1ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Transistor Application :

SWITCHING

Power Dissipation-Max :

114W Tc

Current - Continuous Drain (Id) @ 25°C :

3.4A Tc