FDD4685

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Mfr.Part #
FDD4685
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 40V 8.4A/32A DPAK
Stock
111,606
In Stock :
111,606

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
2.39mm
Dual Supply Voltage :
-40V
Turn-Off Delay Time :
34 ns
Series :
PowerTrench®
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 5V
Resistance :
27mOhm
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Drain to Source Breakdown Voltage :
-40V
Continuous Drain Current (ID) :
8.4mA
Fall Time (Typ) :
14 ns
Rise Time :
15ns
Threshold Voltage :
-1.6V
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Power Dissipation :
69W
Number of Pins :
3
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2380pF @ 20V
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
27m Ω @ 8.4A, 10V
Number of Elements :
1
Voltage - Rated DC :
-40V
Operating Temperature :
-55°C~150°C TJ
Current Rating :
-8.4A
Lifecycle Status :
ACTIVE (Last Updated: 7 hours ago)
Contact Plating :
Tin
Current - Continuous Drain (Id) @ 25°C :
8.4A Ta 32A Tc
Weight :
260.37mg
Radiation Hardening :
No
Length :
6.73mm
Width :
6.22mm
Turn On Delay Time :
8 ns
Drain to Source Voltage (Vdss) :
40V
Operating Mode :
ENHANCEMENT MODE
Published :
2006
ECCN Code :
EAR99
Element Configuration :
Single
Lead Free :
Lead Free
Base Part Number :
FDD4685
FET Type :
P-Channel
Mounting Type :
Surface Mount
Power Dissipation-Max :
69W Tc
Nominal Vgs :
-1.6 V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
40A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pbfree Code :
yes
Termination :
SMD/SMT
Factory Lead Time :
8 Weeks
Datasheets
FDD4685
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD4685 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:FDD4685, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD4685 pinout, FDD4685 datasheet PDF, FDD4685 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD4685 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD4685


P-Channel Tape & Reel (TR) 27m Ω @ 8.4A, 10V ±20V 2380pF @ 20V 27nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD4685 Description


The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. 



FDD4685 Features


  • Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A

  • Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A

  • High-performance trench technology for extremely low rDS(on)

  • RoHS Compliant



FDD4685 Applications


  • DC power source usage

  • Uninterruptible power supplies

  • Electric motor speed control

  • Solar

  • Power grid


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