FDD4685
- Mfr.Part #
- FDD4685
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 8.4A/32A DPAK
- Stock
- 111,606
- In Stock :
- 111,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Height :
- 2.39mm
- Turn-Off Delay Time :
- 34 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- -40V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Ta 32A Tc
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 40V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Dual Supply Voltage :
- -40V
- Series :
- PowerTrench®
- Published :
- 2006
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Resistance :
- 27mOhm
- Base Part Number :
- FDD4685
- Fall Time (Typ) :
- 14 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 6.73mm
- Power Dissipation :
- 69W
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 2380pF @ 20V
- Termination :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Nominal Vgs :
- -1.6 V
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 69W Tc
- Threshold Voltage :
- -1.6V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 8.4mA
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 15ns
- Radiation Hardening :
- No
- Current Rating :
- -8.4A
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -40V
- Weight :
- 260.37mg
- Turn On Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 8.4A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 40A
- Datasheets
- FDD4685

P-Channel Tape & Reel (TR) 27m Ω @ 8.4A, 10V ±20V 2380pF @ 20V 27nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4685 Description
The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.
FDD4685 Features
-
Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
-
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
-
High-performance trench technology for extremely low rDS(on)
-
RoHS Compliant
FDD4685 Applications
-
DC power source usage
-
Uninterruptible power supplies
-
Electric motor speed control
-
Solar
-
Power grid
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