FDD4685
- Mfr.Part #
- FDD4685
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 8.4A/32A DPAK
- Stock
- 111,606
- In Stock :
- 111,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 2.39mm
- Dual Supply Voltage :
- -40V
- Turn-Off Delay Time :
- 34 ns
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Resistance :
- 27mOhm
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- -40V
- Continuous Drain Current (ID) :
- 8.4mA
- Fall Time (Typ) :
- 14 ns
- Rise Time :
- 15ns
- Threshold Voltage :
- -1.6V
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Power Dissipation :
- 69W
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2380pF @ 20V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 8.4A, 10V
- Number of Elements :
- 1
- Voltage - Rated DC :
- -40V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -8.4A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Ta 32A Tc
- Weight :
- 260.37mg
- Radiation Hardening :
- No
- Length :
- 6.73mm
- Width :
- 6.22mm
- Turn On Delay Time :
- 8 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Base Part Number :
- FDD4685
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 69W Tc
- Nominal Vgs :
- -1.6 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 40A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Termination :
- SMD/SMT
- Factory Lead Time :
- 8 Weeks
- Datasheets
- FDD4685

P-Channel Tape & Reel (TR) 27m Ω @ 8.4A, 10V ±20V 2380pF @ 20V 27nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4685 Description
The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.
FDD4685 Features
-
Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
-
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
-
High-performance trench technology for extremely low rDS(on)
-
RoHS Compliant
FDD4685 Applications
-
DC power source usage
-
Uninterruptible power supplies
-
Electric motor speed control
-
Solar
-
Power grid
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