FDD4685

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Mfr.Part #
FDD4685
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 40V 8.4A/32A DPAK
Stock
111,606
In Stock :
111,606

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Termination :
SMD/SMT
Pbfree Code :
yes
Number of Terminations :
2
Terminal Form :
Gull wing
Current Rating :
-8.4A
Vgs(th) (Max) @ Id :
3V @ 250µA
Threshold Voltage :
-1.6V
Current - Continuous Drain (Id) @ 25°C :
8.4A Ta 32A Tc
Width :
6.22mm
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Length :
6.73mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss) :
40V
FET Type :
P-Channel
JESD-30 Code :
R-PSSO-G2
Series :
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 5V
Weight :
260.37mg
Transistor Element Material :
SILICON
Number of Pins :
3
Case Connection :
DRAIN
Power Dissipation :
69W
Fall Time (Typ) :
14 ns
Turn On Delay Time :
8 ns
REACH SVHC :
No SVHC
Factory Lead Time :
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
2380pF @ 20V
Nominal Vgs :
-1.6 V
Voltage - Rated DC :
-40V
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
40A
Dual Supply Voltage :
-40V
Lifecycle Status :
ACTIVE (Last Updated: 7 hours ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
27m Ω @ 8.4A, 10V
Resistance :
27mOhm
Turn-Off Delay Time :
34 ns
Power Dissipation-Max :
69W Tc
Drain to Source Breakdown Voltage :
-40V
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Number of Elements :
1
Rise Time :
15ns
Height :
2.39mm
Continuous Drain Current (ID) :
8.4mA
Radiation Hardening :
No
Published :
2006
Vgs (Max) :
±20V
Element Configuration :
Single
Lead Free :
Lead Free
Base Part Number :
FDD4685
Packaging :
Tape and Reel (TR)
Contact Plating :
Tin
Datasheets
FDD4685
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD4685 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:FDD4685, FDD4685 pinout, FDD4685 datasheet PDF, FDD4685 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD4685 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD4685


P-Channel Tape & Reel (TR) 27m Ω @ 8.4A, 10V ±20V 2380pF @ 20V 27nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD4685 Description


The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. 



FDD4685 Features


  • Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A

  • Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A

  • High-performance trench technology for extremely low rDS(on)

  • RoHS Compliant



FDD4685 Applications


  • DC power source usage

  • Uninterruptible power supplies

  • Electric motor speed control

  • Solar

  • Power grid


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