FDB7030L
- Mfr.Part #
- FDB7030L
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO263AB
- Stock
- 8,037
- In Stock :
- 8,037
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Qualification Status :
- COMMERCIAL
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.44pF @ 15V
- Drain to Source Voltage (Vdss) :
- 30V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 240A
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Operating Temperature :
- -65°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Terminal Finish :
- MATTE TIN
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 40A, 10V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 30V
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 114 mJ
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Power Dissipation-Max :
- 68W Tc
- Drain Current-Max (Abs) (ID) :
- 80A
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Datasheets
- FDB7030L

N-Channel Tape & Reel (TR) 7m Ω @ 40A, 10V ±20V 2.44pF @ 15V 33nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB7030L Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 114 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2.44pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [80A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 240A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDB7030L Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDB7030L Applications
There are a lot of Rochester Electronics, LLC
FDB7030L applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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