FDB7030L
- Mfr.Part #
- FDB7030L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO263AB
- Stock
- 8,037
- In Stock :
- 8,037
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 40A, 10V
- Pulsed Drain Current-Max (IDM) :
- 240A
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 114 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~175°C TJ
- Pin Count :
- 4
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.007Ohm
- Series :
- PowerTrench®
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- DS Breakdown Voltage-Min :
- 30V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 80A
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 68W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Vgs (Max) :
- ±20V
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.44pF @ 15V
- Case Connection :
- DRAIN
- Datasheets
- FDB7030L
FDB7030L Documents

N-Channel Tape & Reel (TR) 7m Ω @ 40A, 10V ±20V 2.44pF @ 15V 33nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB7030L Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 114 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2.44pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [80A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 240A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDB7030L Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDB7030L Applications
There are a lot of Rochester Electronics, LLC
FDB7030L applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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