FCP9N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

JESD-609 Code :

e3

Fall Time (Typ) :

10.2 ns

Continuous Drain Current (ID) :

9A

Length :

10.67mm

Drain to Source Breakdown Voltage :

600V

Threshold Voltage :

2V

Mount :

Through Hole

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Series :

SuperMOS™

Rise Time :

8.7ns

Power Dissipation-Max :

83.3W Tc

Rds On (Max) @ Id, Vgs :

385m Ω @ 4.5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Height :

9.4mm

FET Type :

N-Channel

REACH SVHC :

No SVHC

Turn-Off Delay Time :

36.9 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Turn On Delay Time :

12.7 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation :

83.3W

Width :

4.83mm

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

27A

Drain Current-Max (Abs) (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)