FCP9N60N
- Mfr.Part #
- FCP9N60N
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9A TO220-3
- Stock
- 35,008
- In Stock :
- 35,008
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Mount :
- Through Hole
- Height :
- 9.4mm
- Factory Lead Time :
- 12 Weeks
- Drain Current-Max (Abs) (ID) :
- 9A
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 27A
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 83.3W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Weight :
- 1.8g
- Length :
- 10.67mm
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 36.9 ns
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Rise Time :
- 8.7ns
- Series :
- SuperMOS™
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 9A
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 10.2 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 385m Ω @ 4.5A, 10V
- Drain to Source Breakdown Voltage :
- 600V
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Power Dissipation :
- 83.3W
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Threshold Voltage :
- 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 12.7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1240pF @ 100V
- Width :
- 4.83mm
- Datasheets
- FCP9N60N

N-Channel Tube 385m Ω @ 4.5A, 10V ±30V 1240pF @ 100V 29nC @ 10V TO-220-3
FCP9N60N Description
SupreMOS? MOSFETs are the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that sets them apart from traditional SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are all provided by this modern technology and perfect process control. SupreMOS MOSFETs are well-suited to high-frequency switching power converter applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCP9N60N Features
-
RDS(on) = 330m? ( Typ.) @ VGS = 10V, ID = 4.5A
-
Ultra low gate charge ( Typ. Qg = 22nC )
-
Low effective output capacitance ( Typ. Coss.eff = 106pF )
-
100% avalanche tested
-
RoHS compliant
FCP9N60N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCP9N60N | Fairchild Semiconductor | 48,617 | MOSFET N-CH 600V 9A TO220-3 |
| FCP9N60N-F102 | Fairchild Semiconductor | 800 | POWER MOSFET, N-CHANNEL, SUPREMO |
| FCP9N60N-F102 | Fairchild Semiconductor | 48,364 | MOSFET N-CHANNEL 600V 9A TO220F |
















