FCP4N60
- Mfr.Part #
- FCP4N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.9A TO220-3
- Stock
- 5,963
- In Stock :
- 5,963
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 16.6nC @ 10V
- Dual Supply Voltage :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- SuperFET™
- Rise Time :
- 45ns
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A Tc
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 1.8g
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 36 ns
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Height :
- 16.51mm
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 16 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Termination :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 25V
- Resistance :
- 1.2Ohm
- Width :
- 4.83mm
- Published :
- 2004
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 50mW
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 3.9A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 10.67mm
- Power Dissipation-Max :
- 50W Tc
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Nominal Vgs :
- 5 V
- Fall Time (Typ) :
- 30 ns
- Threshold Voltage :
- 5V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Datasheets
- FCP4N60

N-Channel Tube 1.2 Ω @ 2A, 10V ±30V 540pF @ 25V 16.6nC @ 10V TO-220-3
FCP4N60 Description
The FCP4N60 is a high voltage super-junction (SJ) MOSFET family with an N-channel SuperFET? MOSFET operating at 600V that uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. With this technology, conduction loss is minimized while switching performance, dv/dt rate, and avalanche energy are all improved. As a result, SuperFET MOSFET is ideal for switching power uses such PFC, server/telecom power, FPD TV power, ATX power, and industrial power uses. This product is all-purpose and appropriate for a wide range of uses.
FCP4N60 Features
-
Ultra low gate charge
-
100% Avalanche tested
-
Low effective output capacitance
FCP4N60 Applications
-
Industrial
-
Alternative Energy
-
Enterprise systems
-
Power Management
-
Consumer Electronics
-
Communications & Networking
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