FCP400N80Z

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Mfr.Part #
FCP400N80Z
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 14A TO220-3
Stock
850
In Stock :
850

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
14A
Vgs (Max) :
±20V
Factory Lead Time :
14 Weeks
Series :
SuperFET® II
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
TO-220-3
Pbfree Code :
yes
REACH SVHC :
No SVHC
Element Configuration :
Single
Power Dissipation-Max :
195W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2350pF @ 1000V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
800V
Threshold Voltage :
4.5V
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
14A Tc
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
400m Ω @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
ECCN Code :
EAR99
HTS Code :
8541.29.00.95
Packaging :
Tube
Mounting Type :
Through Hole
Weight :
1.8g
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
4.5V @ 1.1mA
Datasheets
FCP400N80Z
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP400N80Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, FCP400N80Z pinout, FCP400N80Z datasheet PDF, FCP400N80Z amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP400N80Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP400N80Z


N-Channel Tube 400m Ω @ 5.5A, 10V ±20V 2350pF @ 1000V 56nC @ 10V 800V TO-220-3

FCP400N80Z Description


Fairchild Semiconductors' SuperFET? II MOSFET family is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balancing technology to achieve low on-resistance and reduced gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase the dv/dt rate, and increase the available energy. Furthermore, an internal gate-source ESD diode provides for resistance to 2kV HBM surge stress. As a result, SuperFET II MOSFETs are ideal for switching power applications like audio, laptop adapters, lighting, ATX power, and industrial power applications.



FCP400N80Z Features


?Rds(o n) = 340 mQ (Typ. Rds(o n) = 340 mQ (Typ. Rds(o


?Extremely Low Gate Charge (Qg = 43 nC)


?Low Eoss (4.1 uJ @ 400 V)


?Low Effective Output Capacitance (Coss(eff.) = 138 pF)


?Avalanche tested to the nth degree


?Compliance with RoHS


?ESD Capability Enhancement



FCP400N80Z Applications


?Power Supply (AC-DC)


?Lighting with LEDs


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