FCP22N60N

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Mfr.Part #
FCP22N60N
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO220-3
Stock
2,738
In Stock :
2,738

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
TO-220-3
Rds On Max :
165 mΩ
Rds On (Max) @ Id, Vgs :
165mOhm @ 11A, 10V
Power Dissipation :
205W
Recovery Time :
53 ns
Number of Elements :
1
Width :
4.83mm
Vgs (Max) :
±45V
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 100V
Weight :
1.8g
Operating Temperature :
-55°C~150°C TJ
Nominal Vgs :
3 V
Turn On Delay Time :
16.9 ns
Resistance :
165mOhm
Mounting Type :
Through Hole
Mount :
Through Hole
Fall Time (Typ) :
4 ns
Supplier Device Package :
TO-220-3
Max Operating Temperature :
150°C
Threshold Voltage :
3V
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Element Configuration :
Single
Input Capacitance :
1.95nF
FET Type :
N-Channel
Min Operating Temperature :
-55°C
Power Dissipation-Max :
205W Tc
Rise Time :
16.7ns
Series :
SupreMOS™
Drain to Source Voltage (Vdss) :
600V
REACH SVHC :
No SVHC
Factory Lead Time :
12 Weeks
Continuous Drain Current (ID) :
22A
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
9.4mm
Drain to Source Resistance :
140mOhm
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
49 ns
Published :
2013
Drain to Source Breakdown Voltage :
600V
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Length :
10.67mm
Number of Pins :
3
Datasheets
FCP22N60N
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP22N60N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, FCP22N60N pinout, FCP22N60N datasheet PDF, FCP22N60N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP22N60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP22N60N


N-Channel Tube 165mOhm @ 11A, 10V ±45V 1950pF @ 100V 45nC @ 10V 600V TO-220-3

FCP22N60N Description


The SupreMOS MOSFET is On Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench flling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.



FCP22N60N Features


  • UItra Low Gate Charge (Typ. Qg = 45 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)

  • 100% Avalanche Tested

  • RoHS Compliant

  • No SVHC

  • Lead Free



FCP22N60N Applications


  • LCD/LED/PDP TV

  • Lighting

  • Solar Inverter

  • AC-DC Power Supply

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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