FCP22N60N
- Mfr.Part #
- FCP22N60N
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO220-3
- Stock
- 2,738
- In Stock :
- 2,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-220-3
- Rds On Max :
- 165 mΩ
- Rds On (Max) @ Id, Vgs :
- 165mOhm @ 11A, 10V
- Power Dissipation :
- 205W
- Recovery Time :
- 53 ns
- Number of Elements :
- 1
- Width :
- 4.83mm
- Vgs (Max) :
- ±45V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 100V
- Weight :
- 1.8g
- Operating Temperature :
- -55°C~150°C TJ
- Nominal Vgs :
- 3 V
- Turn On Delay Time :
- 16.9 ns
- Resistance :
- 165mOhm
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Fall Time (Typ) :
- 4 ns
- Supplier Device Package :
- TO-220-3
- Max Operating Temperature :
- 150°C
- Threshold Voltage :
- 3V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Element Configuration :
- Single
- Input Capacitance :
- 1.95nF
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 205W Tc
- Rise Time :
- 16.7ns
- Series :
- SupreMOS™
- Drain to Source Voltage (Vdss) :
- 600V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 22A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 9.4mm
- Drain to Source Resistance :
- 140mOhm
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 49 ns
- Published :
- 2013
- Drain to Source Breakdown Voltage :
- 600V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Length :
- 10.67mm
- Number of Pins :
- 3
- Datasheets
- FCP22N60N

N-Channel Tube 165mOhm @ 11A, 10V ±45V 1950pF @ 100V 45nC @ 10V 600V TO-220-3
FCP22N60N Description
The SupreMOS MOSFET is On Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench flling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCP22N60N Features
-
UItra Low Gate Charge (Typ. Qg = 45 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)
-
100% Avalanche Tested
-
RoHS Compliant
-
No SVHC
-
Lead Free
FCP22N60N Applications
-
LCD/LED/PDP TV
-
Lighting
-
Solar Inverter
-
AC-DC Power Supply
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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