FCP20N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Drain to Source Breakdown Voltage :

600V

Weight :

1.8g

Rise Time :

140ns

Number of Pins :

3

Turn-Off Delay Time :

230 ns

Number of Terminations :

3

Threshold Voltage :

5V

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Power Dissipation :

208W

Package / Case :

TO-220-3

Factory Lead Time :

4 Weeks

Series :

SuperFET™

ECCN Code :

EAR99

Lead Free :

Lead Free

Published :

2013

Current Rating :

20A

JESD-609 Code :

e3

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Resistance :

190mOhm

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation-Max :

208W Tc

Width :

4.7mm

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Height :

16.3mm

Packaging :

Tube

Mounting Type :

Through Hole

Turn On Delay Time :

62 ns

Nominal Vgs :

5 V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Avalanche Energy Rating (Eas) :

690 mJ

Continuous Drain Current (ID) :

20A

Voltage - Rated DC :

600V

Pbfree Code :

yes

Length :

10.67mm

FET Type :

N-Channel

Fall Time (Typ) :

65 ns

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V