FCI11N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.49pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

Series :

SuperFET™

Number of Elements :

1

Qualification Status :

COMMERCIAL

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

33A

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Packaging :

Tube

Power Dissipation-Max :

125W Tc

Drain to Source Voltage (Vdss) :

600V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Avalanche Energy Rating (Eas) :

340 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.38Ohm

Pin Count :

3

Pbfree Code :

yes

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain Current-Max (Abs) (ID) :

11A

Operating Mode :

ENHANCEMENT MODE