FCI11N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.38Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.49pF @ 25V

Series :

SuperFET™

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Pbfree Code :

yes

Surface Mount :

No

Power Dissipation-Max :

125W Tc

Avalanche Energy Rating (Eas) :

340 mJ

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

33A

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

11A