FCH35N60
- Mfr.Part #
- FCH35N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 35A TO247-3
- Stock
- 3,631
- In Stock :
- 3,631
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 120ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 600V
- Continuous Drain Current (ID) :
- 35A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 6.39g
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 98m Ω @ 17.5A, 10V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 73 ns
- Published :
- 2013
- Input Capacitance (Ciss) (Max) @ Vds :
- 6640pF @ 25V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Threshold Voltage :
- 3V
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 312.5W Tc
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 20.82mm
- Length :
- 15.87mm
- Gate Charge (Qg) (Max) @ Vgs :
- 181nC @ 10V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 34 ns
- Series :
- SuperMOS™
- Drain-source On Resistance-Max :
- 0.098Ohm
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Width :
- 4.82mm
- Power Dissipation :
- 312.5W
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 105 ns
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Datasheets
- FCH35N60
FCH35N60 Documents

N-Channel Tube 98m Ω @ 17.5A, 10V ±30V 6640pF @ 25V 181nC @ 10V TO-247-3
FCH35N60 Description
The ON Semiconductor FCH35N60 is a SuperFET? MOSFET from the first generation of the high voltage super-junction (SJ) MOSFET family.
FCH35N60 Features
-
650V @TJ = 150??C
-
Typ. RDS(on) = 79m|?
-
Ultra-low gate charge ( Typ. Qg = 139nC )
-
Low effective output capacitance ( Typ. Coss.eff = 340pF )
-
100% avalanche tested
FCH35N60 Applications
-
General usage and suitable for many different applications
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| FCH30AU10 | Fairchild Semiconductor | 14,513 | DIODE SCHOTTKY 100V 30A TO-220 F |
| FCH35N60 | Fairchild Semiconductor | 3,631 | MOSFET N-CH 600V 35A TO247-3 |
















