FCH35N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

35A

Number of Terminations :

3

Weight :

6.39g

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Series :

SuperMOS™

Input Capacitance (Ciss) (Max) @ Vds :

6640pF @ 25V

FET Type :

N-Channel

Fall Time (Typ) :

73 ns

Packaging :

Tube

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

98m Ω @ 17.5A, 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-247-3

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Length :

15.87mm

Turn On Delay Time :

34 ns

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Number of Pins :

3

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Width :

4.82mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

3V

Power Dissipation :

312.5W

Gate Charge (Qg) (Max) @ Vgs :

181nC @ 10V

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Rise Time :

120ns

Power Dissipation-Max :

312.5W Tc

RoHS Status :

ROHS3 Compliant

Published :

2013

Drain-source On Resistance-Max :

0.098Ohm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Element Configuration :

Single

Turn-Off Delay Time :

105 ns

Height :

20.82mm

Current - Continuous Drain (Id) @ 25°C :

35A Tc