FCH35N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Tube

Number of Terminations :

3

Published :

2013

Transistor Application :

SWITCHING

Turn On Delay Time :

34 ns

RoHS Status :

ROHS3 Compliant

Length :

15.87mm

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.098Ohm

Number of Elements :

1

Rise Time :

120ns

Pbfree Code :

yes

Power Dissipation-Max :

312.5W Tc

Weight :

6.39g

Factory Lead Time :

12 Weeks

Power Dissipation :

312.5W

Radiation Hardening :

No

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

181nC @ 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Mounting Type :

Through Hole

Turn-Off Delay Time :

105 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Fall Time (Typ) :

73 ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

35A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6640pF @ 25V

Width :

4.82mm

Drain to Source Breakdown Voltage :

600V

Series :

SuperMOS™

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

20.82mm

Rds On (Max) @ Id, Vgs :

98m Ω @ 17.5A, 10V

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

ECCN Code :

EAR99