FCD9N60NTM

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Mfr.Part #
FCD9N60NTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 9A DPAK
Stock
29,075
In Stock :
29,075

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
SupreMOS™
Width :
6.22mm
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
92.6W
Power Dissipation-Max :
92.6W Tc
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
385m Ω @ 4.5A, 10V
Weight :
260.37mg
Transistor Element Material :
SILICON
Base Part Number :
FCD9N60
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Threshold Voltage :
3V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
6.73mm
Number of Elements :
1
Number of Pins :
3
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
FET Type :
N-Channel
Element Configuration :
Single
Case Connection :
DRAIN
Published :
2004
Vgs (Max) :
±30V
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
600V
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
Height :
2.39mm
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Lead Free :
Lead Free
Turn On Delay Time :
12.7 ns
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 100V
Continuous Drain Current (ID) :
9A
Reach Compliance Code :
not_compliant
Number of Terminations :
2
Rise Time :
9.6ns
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
27A
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
5V @ 250μA
Packaging :
Tape and Reel (TR)
Factory Lead Time :
12 Weeks
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
11.5 ns
Turn-Off Delay Time :
28.7 ns
Drain Current-Max (Abs) (ID) :
9A
Operating Temperature :
-55°C~150°C TJ
Datasheets
FCD9N60NTM
Introducing Transistors - FETs, MOSFETs - Single onsemi FCD9N60NTM from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:FCD9N60, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FCD9N60NTM pinout, FCD9N60NTM datasheet PDF, FCD9N60NTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCD9N60NTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCD9N60NTM


N-Channel Tape & Reel (TR) 385m Ω @ 4.5A, 10V ±30V 1000pF @ 100V 17.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FCD9N60NTM Description


The FCD9N60NTM is an N-channel SuperFET? high voltage super-junction MOSFET employing a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp ON-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.



FCD9N60NTM Features


  • RDS(on) = 330m? ( Typ.) @ VGS = 10V, ID = 4.5A

  • Ultra low gate charge ( Typ. Qg = 17.8nC )

  • Low effective output capacitance ( Typ. Coss.eff = 122pF )

  • 100% avalanche tested

  • RoHS compliant



FCD9N60NTM Applications


  • PFC

  • Server/telecom power

  • FPD TV power

  • ATX power 

  • Industrial power applications


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