FCD9N60NTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 100V

Number of Elements :

1

Turn-Off Delay Time :

28.7 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

385m Ω @ 4.5A, 10V

Power Dissipation-Max :

92.6W Tc

Continuous Drain Current (ID) :

9A

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Turn On Delay Time :

12.7 ns

Power Dissipation :

92.6W

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

9A

Rise Time :

9.6ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pulsed Drain Current-Max (IDM) :

27A

Pbfree Code :

yes

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

260.37mg

Factory Lead Time :

12 Weeks

Width :

6.22mm

Threshold Voltage :

3V

Series :

SupreMOS™

Fall Time (Typ) :

11.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Height :

2.39mm

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

FCD9N60

Published :

2004

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant