FCD9N60NTM
- Mfr.Part #
- FCD9N60NTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9A DPAK
- Stock
- 29,075
- In Stock :
- 29,075
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- SupreMOS™
- Width :
- 6.22mm
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 92.6W
- Power Dissipation-Max :
- 92.6W Tc
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 385m Ω @ 4.5A, 10V
- Weight :
- 260.37mg
- Transistor Element Material :
- SILICON
- Base Part Number :
- FCD9N60
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Threshold Voltage :
- 3V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 6.73mm
- Number of Elements :
- 1
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Published :
- 2004
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Height :
- 2.39mm
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 17.8nC @ 10V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 12.7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 100V
- Continuous Drain Current (ID) :
- 9A
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Rise Time :
- 9.6ns
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 27A
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 11.5 ns
- Turn-Off Delay Time :
- 28.7 ns
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FCD9N60NTM

N-Channel Tape & Reel (TR) 385m Ω @ 4.5A, 10V ±30V 1000pF @ 100V 17.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FCD9N60NTM Description
The FCD9N60NTM is an N-channel SuperFET? high voltage super-junction MOSFET employing a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provide the lowest Rsp ON-resistance, superior switching performance, and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCD9N60NTM Features
-
RDS(on) = 330m? ( Typ.) @ VGS = 10V, ID = 4.5A
-
Ultra low gate charge ( Typ. Qg = 17.8nC )
-
Low effective output capacitance ( Typ. Coss.eff = 122pF )
-
100% avalanche tested
-
RoHS compliant
FCD9N60NTM Applications
-
PFC
-
Server/telecom power
-
FPD TV power
-
ATX power
-
Industrial power applications
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