FCD900N60Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

52W Tc

Drain to Source Breakdown Voltage :

650V

Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

10.9 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Element Configuration :

Single

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

33.6 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Factory Lead Time :

12 Weeks

Weight :

260.37mg

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

47.5 mJ

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Length :

6.73mm

Drain-source On Resistance-Max :

0.9Ohm

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Continuous Drain Current (ID) :

4.5A

Height :

6.22mm

Number of Elements :

1

Rise Time :

5.2ns

Base Part Number :

FCD900N60

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

2.39mm

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Fall Time (Typ) :

11.9 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.3A, 10V

Terminal Form :

Gull wing

Case Connection :

DRAIN

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

SuperFET® II