FCD7N60TM-WS

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Mfr.Part #
FCD7N60TM-WS
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 7A DPAK
Stock
2,500
In Stock :
2,500

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
SuperFET™
FET Type :
N-Channel
Lead Free :
Lead Free
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
920pF @ 25V
Fall Time (Typ) :
32 ns
Mounting Type :
Surface Mount
Vgs (Max) :
±30V
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Number of Terminations :
2
Pbfree Code :
yes
Turn-Off Delay Time :
75 ns
Element Configuration :
Single
Weight :
260.37mg
Transistor Element Material :
SILICON
Resistance :
600mOhm
Packaging :
Tape and Reel (TR)
Base Part Number :
FCD7N60
Continuous Drain Current (ID) :
7A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Elements :
1
Transistor Application :
SWITCHING
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
7A Tc
JEDEC-95 Code :
TO-252AA
Radiation Hardening :
No
Drain Current-Max (Abs) (ID) :
7A
Rds On (Max) @ Id, Vgs :
600m Ω @ 3.5A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drain to Source Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
83W
Rise Time :
55ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
35 ns
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Power Dissipation-Max :
83W Tc
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
4 Weeks
Datasheets
FCD7N60TM-WS
Introducing Transistors - FETs, MOSFETs - Single onsemi FCD7N60TM-WS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, Base Part Number:FCD7N60, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, FCD7N60TM-WS pinout, FCD7N60TM-WS datasheet PDF, FCD7N60TM-WS amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCD7N60TM-WS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCD7N60TM-WS


N-Channel Tape & Reel (TR) 600m Ω @ 3.5A, 10V ±30V 920pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FCD7N60TM-WS Overview


The maximum input capacitance of this device is 920pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

FCD7N60TM-WS Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns


FCD7N60TM-WS Applications


There are a lot of ON Semiconductor
FCD7N60TM-WS applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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