FCD7N60TM-WS
- Mfr.Part #
- FCD7N60TM-WS
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A DPAK
- Stock
- 2,500
- In Stock :
- 2,500
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- SuperFET™
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 25V
- Fall Time (Typ) :
- 32 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±30V
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Element Configuration :
- Single
- Weight :
- 260.37mg
- Transistor Element Material :
- SILICON
- Resistance :
- 600mOhm
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- FCD7N60
- Continuous Drain Current (ID) :
- 7A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- JEDEC-95 Code :
- TO-252AA
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 7A
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 83W
- Rise Time :
- 55ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 35 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 83W Tc
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Datasheets
- FCD7N60TM-WS

N-Channel Tape & Reel (TR) 600m Ω @ 3.5A, 10V ±30V 920pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FCD7N60TM-WS Overview
The maximum input capacitance of this device is 920pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FCD7N60TM-WS Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
FCD7N60TM-WS Applications
There are a lot of ON Semiconductor
FCD7N60TM-WS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCD7N60TF | onsemi | 17,986 | MOSFET N-CH 600V 7A DPAK |
| FCD7N60TM | onsemi | 271 | MOSFET N-CH 600V 7A DPAK |
















