FCD7N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Published :

2013

Length :

6.73mm

Width :

6.22mm

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Series :

SuperFET™

Contact Plating :

Tin

Mount :

Surface Mount

Nominal Vgs :

5 V

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

5V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Number of Elements :

1

Number of Pins :

3

Fall Time (Typ) :

32 ns

Resistance :

600mOhm

Turn On Delay Time :

35 ns

Current Rating :

7A

Weight :

260.37mg

Lead Free :

Lead Free

Turn-Off Delay Time :

75 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Mounting Type :

Surface Mount

Power Dissipation :

83W

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Case Connection :

DRAIN

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Base Part Number :

FCD7N60

Power Dissipation-Max :

83W Tc

Drain Current-Max (Abs) (ID) :

7A

Height :

2.39mm

Vgs (Max) :

±30V

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

7A

Dual Supply Voltage :

600V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Terminal Form :

Gull wing

JESD-609 Code :

e3

Radiation Hardening :

No

Rise Time :

55ns

Number of Terminations :

2

FET Type :

N-Channel

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V