FCD7N60TM
- Mfr.Part #
- FCD7N60TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A DPAK
- Stock
- 271
- In Stock :
- 271
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 5V
- Resistance :
- 600mOhm
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Turn On Delay Time :
- 35 ns
- Voltage - Rated DC :
- 600V
- Base Part Number :
- FCD7N60
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Nominal Vgs :
- 5 V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Length :
- 6.73mm
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Dual Supply Voltage :
- 600V
- Drain Current-Max (Abs) (ID) :
- 7A
- ECCN Code :
- EAR99
- Published :
- 2013
- Packaging :
- Tape and Reel (TR)
- Width :
- 6.22mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Weight :
- 260.37mg
- Fall Time (Typ) :
- 32 ns
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Power Dissipation :
- 83W
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 75 ns
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current Rating :
- 7A
- Power Dissipation-Max :
- 83W Tc
- Height :
- 2.39mm
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 7A
- Series :
- SuperFET™
- Termination :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Mount :
- Surface Mount
- Rise Time :
- 55ns
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- FCD7N60TM
FCD7N60TM Documents

N-Channel Tape & Reel (TR) 600m Ω @ 3.5A, 10V ±30V 920pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
The FCD7N60TM is an N-channel SuperFET? high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCD7N60TM Features
Ultra low gate charge ( Typ. Qg = 23nC )
Low effective output capacitance ( Typ. Coss.eff = 60pF )
100% avalanche tested
650V @TJ = 150°C
Typ. RDS(on) = 530mΩ
RoHS compliant
FCD7N60TM Applications
LCD/ LED TV and Monitor
Lighting
Solar Inverter
AC-DC Power Supply
Industrial
Power Management
Communications & Networking
Lighting
Alternative Energy
Imaging
Video & Vision
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCD7N60TF | onsemi | 17,986 | MOSFET N-CH 600V 7A DPAK |
| FCD7N60TM-WS | onsemi | 2,500 | MOSFET N-CH 600V 7A DPAK |
















