FCB20N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.19Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

690 mJ

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

60A

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

20A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Published :

2005

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

600V

Series :

SuperFET™

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Position :

Single

Power Dissipation-Max :

208W Tc

Case Connection :

DRAIN

Surface Mount :

yes

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Base Part Number :

FCB20N60

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc