FCB20N60FTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Fall Time (Typ) :

65 ns

Mount :

Surface Mount

Weight :

1.31247g

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Length :

10.67mm

Rise Time :

140ns

Mounting Type :

Surface Mount

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Continuous Drain Current (ID) :

20A

Turn On Delay Time :

62 ns

Base Part Number :

FCB20N60

Height :

4.83mm

Transistor Element Material :

SILICON

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

9.65mm

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Voltage - Rated DC :

600V

Power Dissipation-Max :

208W Tc

Case Connection :

DRAIN

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Pins :

3

Current Rating :

20A

Lead Free :

Lead Free

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

60A

Resistance :

190mOhm

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

RoHS Status :

ROHS3 Compliant

Series :

SuperFET™

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

690 mJ

Number of Terminations :

2

Radiation Hardening :

No

Pbfree Code :

yes

Turn-Off Delay Time :

230 ns

Power Dissipation :

208W

Factory Lead Time :

4 Weeks