ESM2012DV
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- Mfr.Part #
- ESM2012DV
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 120A ISOTOP
- Stock
- 7,040
- In Stock ：
- 7,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.5V
- Pin Count :
- 4
- Polarity :
- NPN
- Radiation Hardening :
- No
- hFE Min :
- 1200
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- VCEsat-Max :
- 2 V
- Packaging :
- Tube
- Width :
- 25.4mm
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 175W
- Case Connection :
- Isolated
- Terminal Finish :
- Nickel (Ni)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Type :
- NPN - Darlington
- Current Rating :
- 120A
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE
- Package / Case :
- ISOTOP
- Max Collector Current :
- 120A
- Voltage - Rated DC :
- 120V
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 150V
- Terminal Position :
- UPPER
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1200 @ 100A 5V
- Terminal Form :
- UNSPECIFIED
- Fall Time-Max (tf) :
- 300ns
- Mount :
- Chassis Mount, Screw
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 100A
- Base Part Number :
- ESM2012
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 175W
- Datasheets
- ESM2012DV
NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount
ESM2012DV Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1200 @ 100A 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 120A volts.
ESM2012DV Features
the DC current gain for this device is 1200 @ 100A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 100A
the emitter base voltage is kept at 7V
the current rating of this device is 120A
ESM2012DV Applications
There are a lot of STMicroelectronics
ESM2012DV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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