ESM2012DV
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- Mfr.Part #
- ESM2012DV
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 120A ISOTOP
- Stock
- 7,040
- In Stock ：
- 7,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- VCEsat-Max :
- 2 V
- Width :
- 25.4mm
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 100A
- Collector Emitter Voltage (VCEO) :
- 150V
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 175W
- Terminal Position :
- UPPER
- Packaging :
- Tube
- Number of Terminations :
- 4
- hFE Min :
- 1200
- Terminal Finish :
- Nickel (Ni)
- REACH SVHC :
- No SVHC
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Max Collector Current :
- 120A
- Current Rating :
- 120A
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1200 @ 100A 5V
- Package / Case :
- ISOTOP
- Radiation Hardening :
- No
- Mount :
- Chassis Mount, Screw
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 120V
- ECCN Code :
- EAR99
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 4
- Power Dissipation :
- 175W
- Collector Emitter Breakdown Voltage :
- 120V
- Fall Time-Max (tf) :
- 300ns
- Collector Emitter Saturation Voltage :
- 1.5V
- Base Part Number :
- ESM2012
- Mounting Type :
- Chassis Mount
- Case Connection :
- Isolated
- Datasheets
- ESM2012DV
ESM2012DV Documents
NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount
ESM2012DV Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1200 @ 100A 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 120A volts.
ESM2012DV Features
the DC current gain for this device is 1200 @ 100A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 100A
the emitter base voltage is kept at 7V
the current rating of this device is 120A
ESM2012DV Applications
There are a lot of STMicroelectronics
ESM2012DV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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