ESM2012DV
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- Mfr.Part #
- ESM2012DV
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 120A ISOTOP
- Stock
- 7,040
- In Stock ：
- 7,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 175W
- Case Connection :
- Isolated
- Transistor Type :
- NPN - Darlington
- VCEsat-Max :
- 2 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1200 @ 100A 5V
- Terminal Position :
- UPPER
- Number of Terminations :
- 4
- Pin Count :
- 4
- Polarity :
- NPN
- Width :
- 25.4mm
- Collector Emitter Voltage (VCEO) :
- 150V
- Package / Case :
- ISOTOP
- hFE Min :
- 1200
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Operating Temperature :
- 150°C TJ
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE
- Terminal Form :
- UNSPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Chassis Mount, Screw
- Current Rating :
- 120A
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 7V
- Radiation Hardening :
- No
- Mounting Type :
- Chassis Mount
- Base Part Number :
- ESM2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel (Ni)
- Fall Time-Max (tf) :
- 300ns
- Voltage - Rated DC :
- 120V
- Collector Emitter Breakdown Voltage :
- 120V
- Number of Elements :
- 1
- Max Power Dissipation :
- 175W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 100A
- Max Collector Current :
- 120A
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 1.5V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- ESM2012DV
ESM2012DV Documents
NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount
ESM2012DV Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1200 @ 100A 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 120A volts.
ESM2012DV Features
the DC current gain for this device is 1200 @ 100A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 100A
the emitter base voltage is kept at 7V
the current rating of this device is 120A
ESM2012DV Applications
There are a lot of STMicroelectronics
ESM2012DV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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