EPC2101ENGRT
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- Mfr.Part #
- EPC2101ENGRT
- Manufacturer
- EPC
- Package / Case
- Die
- Datasheet
- Download
- Description
- GAN TRANS ASYMMETRICAL HALF BRID
- Stock
- 8,652
- In Stock ：
- 8,652
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- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On (Max) @ Id, Vgs :
- 11.5mOhm @ 20A, 5V
- Operating Temperature :
- -40°C~150°C TJ
- FET Type :
- 2 N-Channel (Half Bridge)
- FET Feature :
- GaNFET (Gallium Nitride)
- Published :
- 2015
- Supplier Device Package :
- Die
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.5V @ 2mA
- Factory Lead Time :
- 22 Weeks
- Package / Case :
- Die
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A 38A
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 30V
- Series :
- eGaN®
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.7nC @ 5V
- Datasheets
- EPC2101ENGRT
EPC2101ENGRT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from EPC stock available at
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|---|---|---|---|
| EPC200-CSP5 | EPC | 694 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 26,899 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 19,957 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 8,316 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 30,185 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 8,153 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 2,001 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 26,733 | GANFET N-CH 200V 3A DIE |
| EPC2012C | EPC | 49 | GANFET N-CH 200V 5A DIE OUTLINE |
| EPC2014 | EPC | 11,179 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 3,419 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 3,665 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 11,150 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 29,638 | GANFET N-CH 100V 11A DIE |
| EPC2016C | EPC | 4,674 | GANFET N-CH 100V 18A DIE |
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