EMZ8T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

6

Max Collector Current :

500mA

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Published :

2008

Mount :

Surface Mount

Current - Collector (Ic) (Max) :

150mA 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V / 270 @ 10mA 2V

Factory Lead Time :

13 Weeks

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

hFE Min :

120

Collector Emitter Breakdown Voltage :

12V

Terminal Finish :

TIN COPPER

Max Power Dissipation :

150mW

Terminal Form :

Flat

Pin Count :

6

Polarity :

NPN, PNP

Frequency - Transition :

180MHz 260MHz

Operating Temperature :

150°C TJ

Transition Frequency :

180MHz

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Transistor Type :

NPN, PNP

Collector Emitter Voltage (VCEO) :

400mV

Package / Case :

SOT-563, SOT-666

JESD-609 Code :

e2

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Pins :

6

Transistor Application :

SWITCHING

Gain Bandwidth Product :

260MHz

Number of Elements :

2

Collector Base Voltage (VCBO) :

60V

RoHS Status :

ROHS3 Compliant