EMZ7T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

500mA

Published :

2012

Max Breakdown Voltage :

12V

Collector Base Voltage (VCBO) :

15V

hFE Min :

270

JESD-609 Code :

e2

Factory Lead Time :

13 Weeks

Polarity :

NPN, PNP

Max Collector Current :

500mA

Number of Pins :

6

Base Part Number :

*MZ7

Gain Bandwidth Product :

260MHz

Continuous Collector Current :

500mA

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Transition Frequency :

320MHz

Pbfree Code :

yes

Max Power Dissipation :

150mW

Frequency - Transition :

320MHz 260MHz

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN COPPER

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 10mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

6V

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

150°C TJ

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Height :

550μm

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

-100mV

Collector Emitter Breakdown Voltage :

12V

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN, PNP

Collector Emitter Voltage (VCEO) :

12V