EMZ2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

hFE Min :

120

Collector Emitter Saturation Voltage :

-500mV

Collector Emitter Voltage (VCEO) :

50V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

Frequency - Transition :

180MHz 140MHz

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

-6V

Transition Frequency :

180MHz

Current Rating :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

150mW

Continuous Collector Current :

150mA

Base Part Number :

*MZ2

Number of Elements :

2

Number of Pins :

6

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

150mA

Pbfree Code :

yes

Published :

2004

Pin Count :

6

Polarity :

NPN, PNP

Gain Bandwidth Product :

140MHz

Collector Base Voltage (VCBO) :

60V

Transistor Type :

NPN, PNP

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

JESD-609 Code :

e2