EMZ2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Polarity :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Mounting Type :

Surface Mount

Base Part Number :

*MZ2

Max Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-563, SOT-666

Frequency - Transition :

180MHz 140MHz

Continuous Collector Current :

150mA

Pin Count :

6

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Max Collector Current :

150mA

JESD-609 Code :

e2

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Published :

2004

Lead Free :

Lead Free

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

-6V

HTS Code :

8541.21.00.75

Collector Emitter Saturation Voltage :

-500mV

Number of Pins :

6

Max Power Dissipation :

150mW

Mount :

Surface Mount

Pbfree Code :

yes

Current Rating :

150mA

Transition Frequency :

180MHz

Transistor Type :

NPN, PNP

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

60V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

2

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

120

Terminal Finish :

TIN COPPER

Gain Bandwidth Product :

140MHz