EMY1T2R
- Mfr.Part #
- EMY1T2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD (5 Leads), Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN/PNP 50V 0.15A 5EMT
- Stock
- 6,400
- In Stock :
- 6,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 150mA
- Package / Case :
- 6-SMD (5 Leads), Flat Lead
- Published :
- 2004
- Gain Bandwidth Product :
- 180MHz
- JESD-30 Code :
- R-PDSO-F5
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 5
- ECCN Code :
- EAR99
- JESD-609 Code :
- e2
- Transition Frequency :
- 180MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 150mW
- Voltage - Rated DC :
- 60V
- hFE Min :
- 120
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Element Configuration :
- Dual
- Pin Count :
- 5
- HTS Code :
- 8541.21.00.75
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Pbfree Code :
- yes
- Transistor Type :
- NPN, PNP (Emitter Coupled)
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- Frequency - Transition :
- 180MHz 140MHz
- Polarity :
- NPN, PNP
- Number of Pins :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Current Rating :
- 150mA
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Base Part Number :
- *MY1
- Lead Free :
- Lead Free
- Datasheets
- EMY1T2R

EMY1T2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ROHM Semiconductor stock available at
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