EMY1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

6-SMD (5 Leads), Flat Lead

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Max Collector Current :

150mA

hFE Min :

120

Gain Bandwidth Product :

180MHz

Base Part Number :

*MY1

Operating Temperature :

150°C TJ

Transistor Type :

NPN, PNP (Emitter Coupled)

Radiation Hardening :

No

Current Rating :

150mA

Max Power Dissipation :

150mW

JESD-30 Code :

R-PDSO-F5

Number of Pins :

6

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

180MHz

Collector Base Voltage (VCBO) :

60V

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.75

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Pin Count :

5

Factory Lead Time :

13 Weeks

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Terminal Finish :

Tin/Copper (Sn/Cu)

Frequency - Transition :

180MHz 140MHz

Emitter Base Voltage (VEBO) :

6V

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

JESD-609 Code :

e2

Published :

2004

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Polarity :

NPN, PNP

ECCN Code :

EAR99

Voltage - Rated DC :

60V