EMX3T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

120

Number of Terminations :

6

Number of Pins :

6

Base Part Number :

*MX3

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

180MHz

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Current - Collector Cutoff (Max) :

100nA ICBO

HTS Code :

8541.21.00.75

Terminal Form :

Flat

Transistor Type :

2 NPN (Dual)

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Collector Emitter Saturation Voltage :

400mV

Mount :

Surface Mount

Max Breakdown Voltage :

50V

Gain Bandwidth Product :

180MHz

ECCN Code :

EAR99

Element Configuration :

Dual

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e2

Continuous Collector Current :

150mA

Max Collector Current :

150mA

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C TJ

Terminal Finish :

TIN COPPER

Current Rating :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

Emitter Base Voltage (VEBO) :

7V

Transistor Element Material :

SILICON

Max Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Published :

2004