EMT51T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

300mV

Max Breakdown Voltage :

20V

Transition Frequency :

350MHz

Number of Terminations :

6

Terminal Form :

Flat

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Transistor Type :

2 PNP (Dual)

JESD-30 Code :

R-PDSO-F6

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS

Max Power Dissipation :

150mW

Packaging :

Cut Tape (CT)

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

20V

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Power - Max :

150mW

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

200mA

Transistor Element Material :

SILICON

Number of Elements :

2

Frequency - Transition :

350MHz