EMT2DXV6T5G

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Mfr.Part #
EMT2DXV6T5G
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Stock
72,000
In Stock :
72,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Brand Name :
ON Semiconductor
Collector Current-Max (IC) :
0.1 A
Pbfree Code :
yes
Manufacturer :
ON Semiconductor
Polarity :
PNP
Lead Free :
Lead Free
Min Operating Temperature :
-55 °C
Reach Compliance Code :
Unknown
Collector-Emitter Voltage-Max :
60 V
Polarity/Channel Type :
PNP
Number of Elements :
2
ECCN Code :
EAR99
RoHS :
Compliant
Terminal Finish :
Tin (Sn)
Number of Terminals :
6
Surface Mount :
yes
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Terminal Position :
Dual
Configuration :
SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) :
120
Collector Emitter Voltage (VCEO) :
-60 V
Terminal Form :
Flat
Package :
Bulk
hFE Min :
120
Pin Count :
6
Max Power Dissipation :
357 mW
Element Configuration :
Dual
Package Shape :
RECTANGULAR
Collector Emitter Saturation Voltage :
-500 mV
JESD-609 Code :
e3
Max Operating Temperature :
150 °C
Product Status :
Active
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Number of Pins :
6
Max Collector Current :
100 mA
Transistor Application :
AMPLIFIER
JESD-30 Code :
R-PDSO-F6
Gain Bandwidth Product :
140 MHz
Emitter Base Voltage (VEBO) :
6 V
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
-50 V
Series :
*
Datasheets
EMT2DXV6T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi EMT2DXV6T5G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, EMT2DXV6T5G pinout, EMT2DXV6T5G datasheet PDF, EMT2DXV6T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi EMT2DXV6T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi EMT2DXV6T5G


2 Elements SILICON PNP

EMT2DXV6T5G Overview


Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500 mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6 V.In the 60 V setting, the maximum collector-emitter voltage is set.During maximum operation, collector current can be as low as 100 mA volts.

EMT2DXV6T5G Features


a collector emitter saturation voltage of -500 mV
the emitter base voltage is kept at 6 V


EMT2DXV6T5G Applications


There are a lot of onsemi
EMT2DXV6T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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