EMA2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transition Frequency :

250MHz

Number of Terminations :

5

Terminal Finish :

TIN COPPER

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

150mW

Transistor Type :

2 PNP - Pre-Biased (Dual)

Package / Case :

6-SMD (5 Leads), Flat Lead

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

Published :

2004

Base Part Number :

MA2

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

hFE Min :

68

Collector Emitter Voltage (VCEO) :

300mV

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Number of Pins :

5

JESD-609 Code :

e2

Max Collector Current :

100mA

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Resistor - Base (R1) :

47k Ω

Resistor - Emitter Base (R2) :

47k Ω

Pin Count :

5

Frequency - Transition :

250MHz

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Current Rating :

-30mA

Voltage - Rated DC :

-50V