EM6J1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

150mW

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Pins :

6

Pbfree Code :

yes

Continuous Drain Current (ID) :

200mA

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

Number of Terminations :

6

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

-20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

10V

Factory Lead Time :

16 Weeks

Base Part Number :

*J1

Published :

2009

Vgs(th) (Max) @ Id :

1V @ 100µA

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

17 ns

JESD-609 Code :

e2

Rise Time :

4ns

Transistor Element Material :

SILICON

Fall Time (Typ) :

17 ns

Time@Peak Reflow Temperature-Max (s) :

10

Turn On Delay Time :

6 ns

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin/Copper (Sn/Cu)

Power Dissipation :

150mW

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 10V

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

0.2A

Pin Count :

6