DZT751-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

3A

Collector Emitter Saturation Voltage :

-600mV

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency :

145MHz

Emitter Base Voltage (VEBO) :

-5V

Transition Frequency :

145MHz

Height :

1.6mm

Mounting Type :

Surface Mount

Element Configuration :

Single

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

60V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 300mA, 3A

Length :

6.5mm

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Number of Elements :

1

Power - Max :

1W

JESD-609 Code :

e3

Gain Bandwidth Product :

145MHz

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

60V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

4

Case Connection :

COLLECTOR

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

DZT751

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Transistor Application :

SWITCHING

Max Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2W

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Number of Pins :

4

Factory Lead Time :

18 Weeks

Radiation Hardening :

No

Weight :

7.994566mg

Pin Count :

4

Width :

3.5mm

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40